📋 JSON metadata
{
"artifact_id": "L1-495",
"chain_block": 41554142,
"chain_hash": "0x630c015fbc32169d1dbe067bc6a1d2a492b45f7fac124408f46ad5549e44a4bb",
"chain_tx_hash": "0xb5625709800937c6b2fe2456d349ea0a5a96000b06117e09036389b8304271a9",
"domain": "Semiconductor Physics",
"hardness_fn": {
"delta": 3,
"kappa": 80,
"metric": "phi_B_error_meV",
"type": "epsilon_fn"
},
"initiator_dataset": [
{
"ipfs_cid": null,
"license_hash": null,
"name": "primary",
"weight": 1.0
}
],
"layer": "L1",
"observable_profile": {
"metric": "phi_B_error_meV",
"regime": "Well-posed away from breakdown; inversion of (phi_B, A*) ambiguous at single T \u2014 requires T-series.",
"secondary": "IV_log_relative_error"
},
"physics_fingerprint": {
"L_DAG": 3.1,
"carrier": "electron",
"difficulty_delta": 3,
"domain": "Semiconductor Physics",
"integration_axis": "bias_and_temperature",
"noise_model": "gaussian",
"primitives": [
"E.richardson_emission",
"E.barrier_lowering",
"D.time",
"O.IV_vs_T"
],
"problem_class": "nonlinear_inverse",
"sensing_mechanism": "schottky_IV_vs_T",
"solution_space": "phi_B_A_star_R_s_vector",
"sub_domain": "Schottky barrier transport",
"title": "Thermionic Emission at Metal-Semiconductor Interfaces"
},
"size_tiers": {
"allowed_forward_operators": [
"thermionic_forward"
],
"allowed_omega_dimensions": [
"T_K_range",
"V_max_V",
"A_cm2",
"material",
"N_points"
],
"allowed_problem_classes": [
"schottky_barrier_fit"
],
"center_spec": {
"epsilon_fn_center": "phi_B error \u003c= 10 meV",
"forward_operator": "thermionic_forward",
"input_format": "measurement_only",
"omega": {
"A_cm2": 0.0001,
"N_points": 100,
"T_K_range": [
200,
400
],
"V_max_V": 0.5,
"material": "Au_on_Si"
},
"problem_class": "schottky_barrier_fit"
},
"epsilon_bounds": {
"phi_B_error_meV": [
5.0,
200.0
]
},
"omega_bounds": {
"A_cm2": [
1e-08,
1
],
"N_points": [
20,
5000
],
"T_K_max": [
300,
600
],
"T_K_min": [
77,
300
],
"V_max_V": [
0.1,
5.0
]
}
},
"staked_pwm": 0.0,
"status": "testnet",
"sub_domain": "Schottky barrier transport",
"title": "Thermionic Emission at Metal-Semiconductor Interfaces"
}